Mimix Broadband, Inc. Introduces 30 to 36 GHz GaAs MMIC High Power Amplifier Delivering 33 dBm of OIP3

Two-Stage Amplifier Optimized for Linear Operation Includes On-Chip Power Detector

December 9, 2005, Houston, Texas - Mimix Broadband, Inc. introduces today a Gallium Arsenide (GaAs) monolithic microwave integrated circuit (MMIC) two-stage high power amplifier that integrates an on-chip temperature compensated output power detector. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this device covers the 30 to 36 GHz frequency bands and delivers 33 dBm OIP3 and 16 dB small signal gain. The balanced design and Lange couplers help achieve good input and output match.

This high power amplifier, identified as XP1017, is well suited for millimeter-wave point-to-point radio, LMDS and Satcom applications.

"This broadband device has a variety of applications," states Dr. Jim Harvey, CTO of Mimix Broadband, Inc. "At the nominal bias for good linearity, it delivers 33 dBm OIP3 and 24 dBm OP1dB. It can be biased at higher levels to deliver higher saturated CW power within acceptable MTTF limits. The availability of a detector using a directional 'on-chip' coupler adds to the flexibility of the device for power controlled linear or saturated applications."

Mimix performs 100% on-wafer RF, DC and output power testing on the XP1017, as well as 100% visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.

Production quantities and samples are available today. Technical support is also available from Mimix's applications engineers at 281.988.4600. The XP1017 datasheet and additional product information can be obtained from the Mimix Broadband website at www.mimixbroadband.com.

About Mimix
Mimix Broadband, Inc., an ISO 9001-registered company, designs, develops and supplies high performance Gallium Arsenide (GaAs) semiconductors for microwave and millimeter-wave wireless communications applications. Mimix has assembled a team of world-class scientists focused on the development of state-of-the-art semiconductors for the last decade. The Company also leverages strategic partnerships for manufacturing, in order to expedite the time-to-market cycle and meet market requirements. Due in part to its recent acquisition of Celeritek, Mimix offers a highly diversified product line that serves the top tier telecom, satellite and defense companies. Mimix combines its design capabilities in complete communications systems with semiconductor device expertise to deliver innovative solutions for its customers' most challenging applications. For additional information, please visit www.mimixbroadband.com.