Mimix Broadband, Inc. Introduces 8.5 to 11 GHz GaAs MMIC High Power Amplifier Delivering 10 Watts of Output Power

Three-Stage Amplifier Has On-Chip Gate Bias Circuit to Simplify Biasing

October 21, 2004, Houston, Texas - Mimix Broadband, Inc. introduces today a Gallium Arsenide (GaAs) monolithic microwave integrated circuit (MMIC) three-stage, single ended, X-band high power amplifier, which integrates an on-chip gate bias circuit to simplify biasing. Using 0.5 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this device covers the 8.5 to 11 GHz frequency bands, delivers 39 to 40.5 dBm output power, and offers 27 to 33 percent power added efficiency. The amplifier also has a typical large signal gain of 21 dB with good input and output match. This high power amplifier, identified as XP1006, is well suited for radar and communications systems, primarily for military applications.

"Mimix offers this high power amplifier in partnership with TNO," states Rick Montgomery, CEO of Mimix Broadband, Inc. "As strategic partners, we have collaborated to supply this 10 watt high power amplifier to the marketplace, offering an industry leading device for X-band applications. This device not only delivers high power output, it also offers excellent power added efficiency."

"TNO brings to this partnership 10 years of experience in the X-bandhigh power amplifier radar market," adds Frank van den Bogaart, Department Head, Integrated Front End Solutions, TNO Physics and Electronics Laboratory. "We are convinced that the complementary qualities of the two companies guarantee a bright and successful future."

Mimix performs 100% on-wafer RF and DC testing on the XP1006, as well as 100% visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.

Engineering samples are available today from stock, and production quantities are available 6-8 weeks ARO. Technical support is also available from Mimix's applications engineers at 281.988.4600. The XP1006 datasheet and additional product information can be obtained from the Mimix Broadband website at www.mimixbroadband.com.

About Mimix
Mimix Broadband, Inc., an ISO 9001-registered company, designs, develops and supplies high performance monolithic microwave integrated circuits (MMICs) for microwave and millimeter-wave wireless communications applications. Mimix has assembled a team of world-class scientists that has focused on the development of state-of-the-art millimeter-wave MMICs for the last decade. The Company also leverages strategic partnerships for manufacturing, in order to expedite the time-to-market cycle and meet market requirements. Mimix combines its design capabilities in complete communications systems with semiconductor device expertise to deliver innovative solutions for its customers' most challenging applications.

About TNO
The Netherlands Organization for Applied Scientific Research (TNO) is one of the largest research and technology organizations of Europe. The organization's mission is to make scientific knowledge applicable to strengthen the innovative capacity of business and government. In the microwave domain, the Company generates and leverages strategic knowledge for MMIC development, providing leading-edge technology solutions. With close to 20 years of experience using GaAs and more than 10 years in X-band high power amplifier development, the efforts have culminated in the XP1006.