Mimix Broadband, Inc. Introduces 20 to 40 GHz GaAs pHEMT MMIC Low Noise Amplifier With Self Biasing Architecture

LNA includes simple, single supply bias with no need for negative voltages or active bias circuits

March 17, 2004, Houston, Texas – Mimix Broadband, Inc. announced today the introduction of a Gallium Arsenide (GaAs) monolithic microwave integrated circuit (MMIC) three stage low noise amplifier that includes simple, single supply bias with no need for negative voltages or active bias circuits. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this low noise amplifier covers the 20 to 40 GHz frequency bands and can operate at 3.0 volts or 5.0 volts. This device has a noise figure of 2.5 dB across the band and a small signal gain of 20 dB with a P1dB of 8 dBm.

This amplifier, identified as XL1000, serves as an excellent LNA, and is well suited for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), SATCOM, and radar applications.

“The ease of biasing, and the combination of less than 2.5 dB noise figure from 24 to 36 GHz, and useful gain and power from 20 GHdband.com.

About Mimix Broadband
Mimix Broadband, Inc., an ISO 9001-registered company, designs, develops and supplies high performance monolithic microwave integrated circuits (MMICs) for microwave and millimeter-wave wireless communications applications. Mimix has assembled a team of world-class scientists that has focused on the development ofstate-of-the-art millimeter-wave MMICs for the last decade. The Company also leverages strategic partnerships for manufacturing, in order to expedite the time-to-market cycle and meet market requirements. Mimix Broadband combines its design capabilities in complete communications systems with semiconductor device expertise to deliver innovative solutions for its customers’ most challenging applications.