Mimix Broadband, Inc. Introduces 35 to 45 GHz GaAs pHEMT MMIC Buffer Amplifier with the Unique Feature of Adjusting Bias for Low Noise or High Power Performance

Broadband Low Noise or Buffer Amplifier Has Wide Dynamic Range

September 24, 2003, Houston, Texas – Mimix Broadband, Inc. announced today the introduction of a Gallium Arsenide (GaAs) monolithic microwave integrated circuit (MMIC) three stage buffer amplifier with wide dynamic range.

Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this buffer amplifier covers the 35 to 45 GHz frequency bands. This device can also be operated with all three stages biased in parallel or with independent bias for input  and   output   stages,  as required to optimize performance. This MMIC device has a small signal gain of 20 dB with a noise figure of 3 dB across the band. It also has 14 dBm P1dB at low noise bias or can provide 18 dBm P1dB at power bias, with slightly higher gain at power bias.

This amplifier, identified as XB1005, serves as an excellent LNA or buffer amplifier, and is well suited for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), SATCOM and VSAT applications.

“The flexibility of this device is due to its wide bandwidth and the ability to tailor the bias to suit the application,“ stated Dr. Jim Harvey, CTO of Mimix Broadband. “For receiver front end LNA applications, the linearity is sufficient, but with high signal levels the bias can be increased to improve linearity at a small noise penalty. As a buffer amplifier, it can deliver over 18 dBm at 1 dB compression. All three stages can be independently biased for optimum performance, or can be paralleled external to the chip for minimum bias circuit complexity.“

Mimix Broadband Introduces XB1005 Buffer Amplifier
Mimix performs 100% on-wafer RF, DC and noise figure testing on the XB1005, as well as 100% visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.

Engineering samples are available today from stock, and production quantities are available 2-4 weeks ARO. Technical support is also available from Mimix’s applications engineers at 281.988.4600. The XB1005 datasheet and additional product information can be obtained from the Mimix Broadband website at
www.mimixbroadband.com

About Mimix Broadband
Mimix Broadband, Inc., an ISO 9001-registered company, designs, develops and supplies high performance monolithic microwave integrated circuits (MMICs) for microwave and millimeter-wave wireless communications applications. Mimix has assembled a team of world-class scientists that has focused on the development of state-of-the-art millimeter-wave MMICs for the last decade. The Company also leverages strategic partnerships for manufacturing, in order to expedite the time-to-market cycle and meet market requirements. Mimix Broadband combines its design capabilities in complete communications systems with semiconductor device expertise to deliver innovative solutions for its customers’ most challenging applications.