Mimix Broadband, Inc. Introduces 18 to 25 GHz GaAs MMIC Sub-harmonically Pumped Transmitter

Single Chip Transmitter Integrates Image Reject Mixer, LO Buffer and Output Amplifier

May 23, 2003, Houston, Texas – Mimix Broadband, Inc. announced today the introduction of a Gallium Arsenide (GaAs) monolithic microwave integrated circuit (MMIC) sub-harmonically pumped transmitter, which integrates an image reject sub-harmonic anti-parallel diode mixer followed by a balanced two stage output amplifier and includes an integrated LO buffer amplifier. The image reject mixer eliminates the need for an image bandpass filter after the output amplifier to remove thermal noise at the image frequency. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this transmitter covers the 18 to 25 GHz frequency bands. The MMIC device has 20 dBm output third order intercept (OIP3), 15 dB image rejection across the band and 2 dBm LO drive level.

This transmitter, identified as 22TRX0175, is well suited for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), SATCOM and VSAT applications.

“The high level of integration in this device, combined with the use of an image reject sub-harmonic mixer, allows this device to replace three or four single function MMICs and a printed band-pass filter, in addition to permitting a single module to be used over the entire 18 and 23 GHz point-to-point bands without requiring sub-banded variants,” stated Dr. Jim Harvey, CTO of Mimix Broadband. “It also provides coverage of the 24 GHz ISM band, and needs a low level LO at 10 GHz, thus allowing low-cost LO technology to be used for 18 to 25 GHz radio applications. For ISM applications, the saturated output power level of 10 dBm may also eliminate the need for a power amplifier.”

Mimix performs 100% on-wafer RF and DC testing on the 22TRX0175, as well as 100% visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.

Engineering samples are available today from stock and production quantities are available 6-10 weeks after order processing. Technical support is also available from Mimix’s applications engineers at 281.988.4600. The 22TRX0175 datasheet and additional product information can be obtained from the Mimix Broadband website at www.mimixbroadband.com

About Mimix Broadband
Mimix Broadband, Inc., an ISO 9001-registered company, designs, develops and markets high performance monolithic microwave integrated circuits (MMICs) for microwave and millimeter-wave wireless communications applications. Mimix has assembled a team of world-class scientists that has been focused on the development of state-of-the-art millimeter-wave MMICs for the last decade. The Company also leverages strategic partnerships for manufacturing, in order to expedite the time-to-market cycle and meet market requirements. Backed by experienced, highly successful stakeholders, Mimix Broadband combines our design capabilities in complete communications systems with semiconductor device expertise to provide comprehensive insight in the technology and issues that its customers confront in developing products.