Mimix Broadband, Inc. Introduces High Dynamic Range 16 to 30 GHz GaAs pHEMT MMIC Buffer Amplifier

Buffer Amplifier Can Be Biased for Low Noise or High Power Performance

May 15, 2003, Houston, Texas – Mimix Broadband, Inc. announced today the introduction of a Gallium Arsenide (GaAs) monolithic microwave integrated circuit (MMIC) three stage buffer amplifier, which can be operated with all three stages biased in parallel, or with independent bias for input and output stages as required to optimize performance. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this buffer amplifier covers the 16 to 30 GHz frequency band and can be biased for low noise or high power performance. The MMIC device has a small signal gain of 21 dB with a noise figure of 2 dB across the band when biased for low noise. This device also has 18 dBm P1dB compression point at high power bias.

This high dynamic range amplifier, identified as XB1004, serves as an excellent LNA, LO driver, or saturated or linear buffer amplifier, and is well suited for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), SATCOM and VSAT applications. The XB1004 is also pin-for-pin compatible with Mimix Broadband’s XB1001 device.

“The multi-function capability of this device allows its use in several roles in transceivers or test equipment,” stated Dr. Jim Harvey, CTO of Mimix Broadband. “When biased for low noise, it has 2 dB noise figure over a wide band, and still maintains a 14 dBm OP1. At power bias, the OP1 increases to 18 dBm, while the noise figure typically degrades by less than 0.5 dB. Thus, the same device can be used in a high linearity LNA in a receiver, as an LO buffer in receivers or transmitters, and as a buffer or saturated output stage in transmitters.”

Mimix performs 100% on-wafer RF, DC and noise figure testing on the XB1004, as well as 100% visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.

Engineering samples are available today from stock and production quantities are available 6-10 weeks after order processing. Technical support is also available from Mimix’s applications engineers at 281.988.4600. The XB1004 datasheet and additional product information can be obtained from the Mimix Broadband website at www.mimixbroadband.com.

About Mimix Broadband
Mimix Broadband, Inc., an ISO 9001-registered company, designs, develops and markets high performance monolithic microwave integrated circuits (MMICs) for microwave and millimeter-wave wireless communications applications. Mimix has assembled a team of world-class scientists that has been focused on the development of state-of-the-art millimeter-wave MMICs for the last decade. The Company also leverages strategic partnerships for manufacturing, in order to expedite the time-to-market cycle and meet market requirements. Backed by experienced, highly successful stakeholders, Mimix Broadband combines our design capabilities in complete communications system with semiconductor device expertise to provide comprehensive insight in the technology and issues that its customers confront in developing products.