Mimix Broadband, Inc. Introduces 27 to 35 GHz GaAs MMIC Power Amplifier with High Linearity Output

XP1003 Ideal for Modulations Levels Up to 64 QAM

February 17, 2006, Houston, Texas - Mimix Broadband, Inc. announced today the introduction of a Gallium Arsenide (GaAs) monolithic microwave integrated circuit (MMIC) power amplifier optimized for linear operation. This two-stage power amplifier is excellent for modulation levels up to 64 QAM and has a typical third order intercept point of +34 dBm. The device also includes Lange couplers to achieve good input/output return loss and has a small signal gain of 16 dB across the band. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this chip covers the 27 to 35 GHz frequency band.

This power amplifier, identified as XP1003, is well suited for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), SATCOM and VSAT applications.

Dr. Jim Harvey, CTO, Mimix Broadband, Inc. stated, "The XP1003 incorporates a temperature compensated detector connected by a directional coupler to the amplifier output. The use of a directional coupler ensures that the additional distortion induced by the detector does not worsen the overall OIP3 for the amplifier. It also allows users to control radio output power more accurately than circuits using non-directional couplers, since it is less influenced by power reflected from the load."

Mimix performs 100% on-wafer RF, DC and output power testing on the XP1003, as well as 100% visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.

Engineering samples are available from stock and production quantities are available within 6-8 weeks after order processing. Technical support is also available from Mimix's applications engineers at 281.988.4600. Additionally, please visit Mimix's website (www.mimixbroadband.com) for the XP1003 datasheet and additional product information.

About Mimix
Mimix Broadband, Inc., an ISO 9001-registered company, designs, develops and supplies high performance Gallium Arsenide (GaAs) semiconductors from DC to 50 GHz for microwave and millimeter-wave wireless communications applications - as bare die or in surface mount packages. Mimix has assembled a team of world-class scientists focused on the development of state-of-the-art semiconductors for the last decade. The Company also leverages strategic partnerships for manufacturing, in order to expedite the time-to-market cycle and meet market requirements. Due in part to its recent acquisition of Celeritek, Mimix offers a highly diversified product line that serves the top tier telecom, satellite and defense companies. Mimix combines its design capabilities in complete communications systems with semiconductor device expertise to deliver innovative solutions for the most challenging applications. For additional information, please visit www.mimixbroadband.com.