Mimix Broadband, Inc. Introduces 20 to 32 GHz GaAs MMIC Receiver
for High Index Modulation Schemes up to 256 QAM

Receiver with Industry-leading Functionality on a Single Chip Comprised of
Three Stage LNA, "Tee" Attenuator and Image Reject Mixer

January 10, 2002, Houston, Texas - Mimix Broadband, Inc. announced today the introduction of a Gallium Arsenide (GaAs) monolithic microwave integrated circuit (MMIC) receiver comprised of a three stage low noise amplifier (LNA) followed by a single transistor "Tee" attenuator and an image reject fundamental resistive high electron mobility transistor (HEMT) mixer. The image reject mixer eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. Using 0.15 micron gate length GaAs pseudomorphic HEMT (pHEMT) device model technology, this receiver covers the 20 to 32 GHz frequency bands and is well suited to provide minimum distortion for high index modulation schemes.

This receiver, identified as XR1002, has a 12 dB gain control range, typical noise figure of 3 dB, 18 dB typical image rejection across the band and 4 dBm input third order intercept (IIP3). At high signal levels, the radio AGC system can be used to reduce the receiver gain improving the IIP3 providing for minimum distortion at modulation schemes as high as 256 QAM. The XR1002 is well suited for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), SATCOM and VSAT applications.

"The high level of integration on this device significantly reduces the chip count for a microwave radio, and enhances linearity at lower cost than alternative approaches," stated Dr. Jim Harvey, CTO of Mimix Broadband, Inc. "Although a very simple attenuator has been used to improve the dynamic range, the results justify the use of an AGC at the front end to provide increased linearity in high order QAM receivers."

Mimix performs 100% on-wafer RF and DC testing on the XR1002, as well as 100% visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.

Engineering samples are available today from stock and production quantities are available 12 to 16 weeks after order processing. Technical support is also available from Mimix's applications engineers at 281.988.4600. Additionally, please visit Mimix's website (www.mimixbroadband.com) for the XR1002 datasheet and additional product information.

About Mimix Broadband, Inc.
Mimix Broadband, Inc. designs, develops and markets high performance Gallium Arsenide (GaAs) monolithic microwave integrated circuits (MMICs) for applications operating at 17 to 44+ GHz. Mimix has assembled a team of world-class scientists that has been focused on the development of state-of-the-art millimeter-wave MMICs for the last decade. The Company also leverages strategic partnerships for manufacturing in order to expedite the time-to-market cycle and meet market requirements. Backed by experienced, highly successful stakeholders, Mimix Broadband combines its expertise in overall radio system design to provide comprehensive insight in the technology and issues that its customers confront in designing their products.