Mimix Broadband, Inc. Introduces 17 to 25 GHz GaAs MMIC Power Amplifier with Temperature Compensated Output Detector

Power Amplifier Available in Bare Die or 4x4mm QFN Surface Mount Package with On-Chip ESD Protection

January 26, 2007, Houston, Texas - Mimix Broadband, Inc. introduces today a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) three stage power amplifier with the unique feature of a temperature compensated output detector. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, the power amplifier covers the 17 to 25 GHz frequency bands and has a small signal gain of 20 dB with +28 dBm P1dB compression point. The XP1022 die includes on-chip ESD protection and is available in an RoHS compliant 4x4mm QFN Surface Mount Package offering excellent RF and thermal properties.

This power amplifier, identified as XP1022-BD for the bare die device or XP1022-QF for the QFN package, is ideal for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), SATCOM and VSAT applications.

"The XP1022 offers the unique combination of broadband operation with good linearity and power efficiency," stated Paul Beasly, Product Manager of Mimix Broadband, Inc. "The device is very competitive in size with the added advantages of being available in a 4x4 QFN package and offering the unique feature of an on-chip temperature compensated power detector that allows the user to easily regulate the signal level without the need for additional power detectors in the transmitter chain."

Mimix performs 100% RF, DC and output power testing on the XP1022, as well as 100% visual inspection to MIL-STD-883 method 2010 for the bare die. The chips also have surface passivation to protect and provide rugged parts with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.

Samples are available today from stock, along with production quantities. Technical support is also available from Mimix's applications engineers at 281.988.4600. The datasheets and additional product information can be obtained from the Mimix Broadband website at www.mimixbroadband.com .

About Mimix
Mimix Broadband, Inc., an ISO 9001-registered company, designs, develops and supplies high performance gallium arsenide (GaAs) semiconductors from DC to 50 GHz for microwave and millimeter-wave wireless communications applications - as bare die or in surface mount packages. Mimix has assembled a team of world-class scientists focused on the development of state-of-the-art semiconductors for the last decade. The Company also leverages strategic partnerships for manufacturing, in order to expedite the time-to-market cycle and meet market requirements. Due in part to its acquisition of Celeritek, Mimix offers a highly diversified product line that serves the top tier telecom, satellite and
defense companies. Mimix combines its design capabilities in complete communications systems with semiconductor device expertise to deliver innovative solutions for the most challenging applications. For additional information, please visit www.mimixbroadband.com .