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Mimix Broadband Introduces Highly Integrated, 36 to 40 GHz GaAs MMIC
Receiver
Device Comprised of a Two Stage LNA Followed by a Pair of Sub-harmonic
Mixers to Form an Image Reject Mixer
October 16, 2001 Houston, Texas Mimix Broadband announced
today the introduction of a Gallium Arsenide (GaAs) monolithic microwave
integrated circuit (MMIC) receiver, which is comprised of a two stage low
noise amplifier (LNA) followed by a pair of sub-harmonic mixers, configured
to form an image reject mixer. The image reject mixer removes the need
for a bandpass filter after the LNA to remove thermal noise at the image
frequency. The use of a sub-harmonic mixer makes the provision of the LO
easier than for fundamental mixers at these frequencies. I and Q mixer
outputs are provided and an external 90 degree hybrid is required to select
the desired sideband.
Using
0.15 micron gate length GaAs pseudomorphic high electron mobility transistor
(pHEMT) device model technology, this receiver, identified as XR1001, covers
the 36 to 40 GHz frequency bands. The XR1001 has a typical small signal
gain of 5 dB with a typical noise figure of 4 dB and 12 dB typical image
rejection across the band. This device is well suited for wireless communications
applications such as millimeter-wave point-to-point radio, local multipoint
distribution services (LMDS), SATCOM and VSAT applications.
"The use of anti-parallel diode based sub-harmonic mixers allows
a 20 GHz LO to be used at 15 dBm levels," stated Dr. Jim Harvey, CTO
of Mimix Broadband. "This permits the use of low cost coax or microstrip
coupling from a lower cost LO than if a fundamental mixer were used. The
system designer can multiply this up from a VCO at a few GHz, or can generate
the LO signal directly at 20 GHz."
Mimix performs 100% on-wafer RF and DC testing on the XR1001, as well
as 100% visual inspection to MIL-STD-883 method 2010. The chip also has
surface passivation to protect and provide a rugged part with backside
via holes and gold metallization to allow either a conductive epoxy or
eutectic solder die attach process.
Engineering samples are available today from stock and production quantities
are available 12 to 16 weeks after order processing. Technical support
is also available from Mimix’s applications engineers at 281.988.4600.
Additionally, please visit Mimix’s website (www.mimixbroadband.com)
for the XR1001 datasheet and additional product information.
About Mimix Broadband
Mimix Broadband designs, develops and markets high performance Gallium Arsenide (GaAs) monolithic microwave integrated circuits (MMICs) for broadband
wireless access (BWA) technologies at millimeter-wave frequencies. Mimix
has assembled a team of world-class scientists that has been focused on
the development of state-of-the-art millimeter-wave MMICs for the last
decade. The Company also leverages strategic partnerships for manufacturing
in order to expedite the time-to-market cycle and meet market requirements.
Backed by experienced, highly successful stakeholders, Mimix Broadband
combines its expertise in overall radio system design to provide comprehensive
insight in the technology and issues that its customers confront in designing
their products.
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