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Mimix Broadband Introduces Highly Integrated, 36 to 40 GHz GaAs MMIC Receiver

Device Comprised of a Two Stage LNA Followed by a Pair of Sub-harmonic Mixers to Form an Image Reject Mixer

October 16, 2001 Houston, Texas ­ Mimix Broadband announced today the introduction of a Gallium Arsenide (GaAs) monolithic microwave integrated circuit (MMIC) receiver, which is comprised of a two stage low noise amplifier (LNA) followed by a pair of sub-harmonic mixers, configured to form an image reject mixer. The image reject mixer removes the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. The use of a sub-harmonic mixer makes the provision of the LO easier than for fundamental mixers at these frequencies. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband.

Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this receiver, identified as XR1001, covers the 36 to 40 GHz frequency bands. The XR1001 has a typical small signal gain of 5 dB with a typical noise figure of 4 dB and 12 dB typical image rejection across the band. This device is well suited for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), SATCOM and VSAT applications.

"The use of anti-parallel diode based sub-harmonic mixers allows a 20 GHz LO to be used at 15 dBm levels," stated Dr. Jim Harvey, CTO of Mimix Broadband. "This permits the use of low cost coax or microstrip coupling from a lower cost LO than if a fundamental mixer were used. The system designer can multiply this up from a VCO at a few GHz, or can generate the LO signal directly at 20 GHz."

Mimix performs 100% on-wafer RF and DC testing on the XR1001, as well as 100% visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.

Engineering samples are available today from stock and production quantities are available 12 to 16 weeks after order processing. Technical support is also available from Mimix’s applications engineers at 281.988.4600. Additionally, please visit Mimix’s website (www.mimixbroadband.com) for the XR1001 datasheet and additional product information.

About Mimix Broadband
Mimix Broadband designs, develops and markets high performance Gallium Arsenide (GaAs) monolithic microwave integrated circuits (MMICs) for broadband wireless access (BWA) technologies at millimeter-wave frequencies. Mimix has assembled a team of world-class scientists that has been focused on the development of state-of-the-art millimeter-wave MMICs for the last decade. The Company also leverages strategic partnerships for manufacturing in order to expedite the time-to-market cycle and meet market requirements. Backed by experienced, highly successful stakeholders, Mimix Broadband combines its expertise in overall radio system design to provide comprehensive insight in the technology and issues that its customers confront in designing their products.

Mimix Broadband, Inc. 10795 Rockley Rd., Houston, TX 77099 281.988.4600
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