Mimix Broadband Introduces Three Stage 17 to 27 GHz GaAs pHEMT MMIC Gain Block Amplifier

Gain Block Amplifier Can Be Biased for Low Noise Performance or High Power Performance

August 14, 2001 Houston, Texas ­ Mimix Broadband announced today the introduction of a Gallium Arsenide (GaAs) monolithic microwave integrated circuit (MMIC) three stage gain block amplifier, which can be operated with all three stages biased in parallel. Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, this gain block amplifier covers the 17 to 27 GHz frequency bands. The MMIC device also has a typical small signal gain of 22 dB with a typical noise figure of 3 dB across the band.

This gain block amplifier, identified as XB1000, can be biased for low noise performance or high power performance and is well suited for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), SATCOM and VSAT applications. Mimix Broadband also offers this same gain block amplifier, identified as XB1001, with a typical small signal gain of 18 dB for applications requiring lower gain.

"The ability to bias for low noise or high power gives this circuit the flexibility to be used as a low noise amplifier (LNA) or a buffer amplifier," stated Dr. Jim Harvey, CTO of Mimix Broadband. "As an LNA with 2 to 3 dB noise figure, the linearity is sufficient to meet ETSI dynamic range requirements, but when biased for optimum power output, an outstanding P1 and OIP3 performance is obtained for a gain block amplifier with a small degradation in noise performance. In addition, the input stages can be biased independently of the output stage if required, offering further flexibility. For most applications, all stages are biased in parallel. The XB1000 amplifier is used as a sub-circuit on the XR1000 receiver, which also integrates an image reject mixer."

Mimix performs 100% on-wafer RF, DC and noise figure testing on the XB1000, as well as 100% visual inspection to MIL-STD-883 method 2010. The chip also has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.

Engineering samples are available today from stock and production quantities are available immediately after order processing. Technical support is also available from Mimix’s applications engineers at 281.988.4600. Additionally, please visit Mimix’s website (www.mimixbroadband.com) for the XB1000 datasheet and additional product information.

About Mimix Broadband
Mimix Broadband designs, develops and markets high performance Gallium Arsenide (GaAs) monolithic microwave integrated circuits (MMICs) for broadband wireless access (BWA) technologies at millimeter-wave frequencies. Mimix has assembled a team of world-class scientists that has been focused on the development of state-of-the-art millimeter-wave MMICs for the last decade. The Company also leverages strategic partnerships for manufacturing in order to expedite the time-to-market cycle and meet market requirements. Backed by experienced, highly successful stakeholders, Mimix Broadband combines its expertise in overall radio system design to provide comprehensive insight in the technology and issues that its customers confront in designing their products.