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Mimix Broadband Introduces GaAs pHEMT MMIC Two Stage Power Amplifier
Optimized for Third Order Intercept Point (IP3)
Designed for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT
Applications
March 2, 2001, Houston, Texas Mimix Broadband announced
today the introduction of a Gallium Arsenide (GaAs) monolithic microwave
integrated circuit (MMIC) two stage power amplifier optimized for linear
operation with a typical third order intercept point (IP3) of +36 dBm.
Using 0.15 micron gate length GaAs pseudomorphic high electron mobility
transistor (pHEMT) device model technology, the power amplifier covers
the 17 to 24 GHz frequency band and has a typical small signal gain of
18 dB. Furthermore, this device includes Lange couplers to achieve good
input/output return loss (15 dB) and an on-chip temperature compensated
output power detector.
  This
power amplifier, identified as XP1000, provides equipment designers with
a highly optimized product with good linearity and is well suited for wireless
communications applications such as millimeter-wave point-to-point radio,
local multipoint distribution services (LMDS), SATCOM and VSAT applications.
"This power amplifier, XP1000, has a high ratio of OIP3 to P1dB,
and is intended for use in QAM radios where linearity and accurate determination
of maximum RF power level are critical," stated Jim Harvey, CTO of
Mimix Broadband. "In 16 to 128 QAM radios, the final amplifier is
backed off to achieve the required adjacent channel power levels. The tightly
integrated temperature compensated detector allows operation close to the
maximum allowable power level."
Mimix performs 100% on-wafer RF, DC and output power testing on the XP1000,
as well as 100% visual inspection to MIL-STD-883 method 2010. The chip
also has surface passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow either a conductive
epoxy or eutectic solder die attach process.
Engineering samples are available today from stock and production quantities
are available within 10 to 12 weeks after order processing. Technical support
is also available from Mimix’s applications engineers at 281.988.4600.
Additionally, please visit Mimix’s website (www.mimixbroadband.com)
for the XP1000 datasheet and additional product information.
About Mimix Broadband
Mimix Broadband designs, develops and markets high performance Gallium Arsenide (GaAs) monolithic microwave integrated circuits (MMICs) for broadband
wireless access technologies at millimeter-wave frequencies. The Company
leverages strategic partnerships for manufacturing in order to expedite
the time-to-market cycle and meet market requirements. Backed by experienced,
highly successful stakeholders, Mimix Broadband combines its expertise
in overall radio system design to provide comprehensive insight in the
technology and issues that its customers confront in designing their products.
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